Extending the application range of GaN power devices to higher voltage and power may necessitate the use of the favored vertical geometry. As the voltage range of the device is increased, the drift ...

Diodes Incorporated ZXGD3103 is a gate driver IC that is redefining rectification by enabling the use of MOSFETs in place of traditional Schottky diodes. Nowadays in power electronic devices, ...

Conflux Technology leverages additive manufacturing to revolutionize heat exchanger design, enhancing thermal efficiency, reducing weight, and optimizing energy use across industries. In an era where ...

Our speaker is Anton Winkler, a systems engineer and power modules technologist at Texas Instruments. Today, we’re focusing on a key challenge in modern power design: delivering higher efficiency, ...

As WBG semiconductors, both GaN and SiC, continue to grow and evolve, so is the need for production and manufacturing of these devices. As the wide bandgap (WBG) semiconductors, both gallium nitride ...

The use of Linear Complementarity Problems (LCP) is a powerful method for modeling switched systems, particularly in the context of power electronic circuits. Switched circuits are ubiquitous in ...

SDE, the acronym for “Stochastic Differential Equations”, is a framework applicable to power electronics, in particular to the simulation and analysis of noise. SDE, the acronym for “Stochastic ...

The new battery cell delivers an energy density of 370 Wh/kg, coupled with power performance exceeding 3000 W/kg. Amprius Technologies has unveiled its latest innovation, its newest SiCore cell as ...

In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...

Today, we have the privilege of chatting with Rudi De Winter, CEO of X-FAB, a leading specialty foundry for analog and mixed-signal semiconductors. Today, we have the privilege of chatting with Rudi ...

Dual-diode and single-phase bridge devices (40 A to 240 A) feature low forward voltage drop down to 1.36 V and QC as low as 56 nC. Vishay Intertechnology, Inc. has unveiled 16 new 650 V and 1200 V ...

Today, we’re focusing on a key challenge in modern power design: delivering higher efficiency, reduced EMI, and advanced thermal management while minimizing size and complexity. Our speaker is Anton ...