After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Swiss innovation centre CSEM, in collaboration with Dutch deep-tech startup QDI Systems, has developed what is claimed to be ...

Navitas Semiconductor has announced a partnership with BrightLoop supporting their latest series of hydrogen fuel-cell ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

The project 'GENIE-RFIC: Generative ENgine for Intelligent and Expedited RFIC Design' will focus on GaN MMICs and CMOS RFICs.

TrendForce adds that while Renesas has reportedly decided to halt in-house production of SiC power chips, the company does ...

Under the collaboration, Soitec will supply PSMC 300mm substrates incorporating a release layer, Transistor Layer Transfer ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

From June 10 to 12 at GreenTech 2025 in Amsterdam, Ams Osram will be exhibiting its latest-generation of LED and sensor ...

French MBE firm Riber has announced the sale of an MBE 412 research system to an Asian university institute. The university ...

According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...