EurekAlert!

A 'smart' chip that reduces both consumption and computing time marks a breakthrough in high-performance computing at Politecnico di Milano

Dramatically reducing energy consumption while accelerating the processing of large amounts of data. This is the aim of the ...
Nasdaq

Marvell Unveils Industry's First 2nm Custom SRAM To Boost AI And Cloud Chip Performance

(RTTNews) - Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM. This innovation ...
Nanowerk

Random-Access Memory (RAM): High-Speed Data Storage and Retrieval

RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...
Semiconductor Engineering

SRAM Cell Scaling With Monolithic 3D Integration Of 2D FETs (Penn State)

A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...
Forbes

Emerging Non-Volatile Memories Seek Economies Of Scale

Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...
Science Daily

Demonstration of high-speed SOT-MRAM memory cell compatible with 300mm Si CMOS technology

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...