Geneva, IL. Richardson RFPD Inc. has announced the availability of and full design support capabilities for a new RF power LDMOS transistor from NXP Semiconductors. The MRF13750H/MRF13750HS, available ...
Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
Graphene could be a useful material for high-performance transistors because it carries electrons faster than silicon. Since graphene transistors can’t be turned off, they’re more useful for RF ...
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