A six-pack IGBT module can be paralleled to obtain higher power levels. New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new ...

Power Integrations launches SCALE EV: automotive-qualified IGBT/SiC module driver family; targets bus, truck and con-ag EVs.

The gate driver provides automotive-related protection functionalities and diagnostics. A galvanically isolated IGBT module with integrated NTC read-out provides IGBT module temperature information.

The new gate drivers target the popular new dual, 100 mm x 140 mm style of IGBT modules, such as the Mitsubishi LV100 and the Infineon XHP 2, as well as silicon carbide (SiC) variants thereof up ...

Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...

Dow (NYSE: Dow) launched today DOWSIL™ EG-4175 Silicone Gel, a highly reliable protective solution for next-generation ...

Thorsten Schmidt, product marketing manager at Power Integrations, commented: “The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules.

Power Integrations has announced the SCALE-iFlex gate-driver system for IGBT, hybrid and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 kV to 4.5 kV.

Power Integrations has announced the launch of the SCALE-iFlex XLT family of dual-channel plug-and-play gate drivers. These devices are intended for operation of single LV100 (Mitsubishi), XHP 2 ...

Dow launched DOWSIL EG-4175 silicone gel, a reliable protective solution for next-generation IGBT modules that operate at ...

El Segundo, Calif.&#8212International Rectifier's new high-voltage gate driver and current-sense ICs in the company's IR22xxx family combines IGBT control with a sophisticated set of protection ...

Two 35-V single-channel gate drivers from Texas Instruments, the UCC27531 and UCC27532, drive IGBT (insulated-gate bipolar transistor) and SiC (silicon carbide) FET power switches with 2.5-A source ...