Resistive random access memory (ReRAM), which is based on oxide materials, is gaining attention as a next-generation memory ...

Recently, hafnia-based ferroelectric memory has emerged as a promising next-generation memory technology. Hafnia (Hafnium oxide) enables ferroelectric memories to operate at low voltages and high ...

Resistive Random Access Memory (ReRAM), which is based on oxide materials, is gaining attention as a next-generation memory ...

Recent advancements in neurotechnology have led to the development of brain implants that can significantly enhance memory ...

In the world of robotics, the spotlight often falls on sensors, actuators, and artificial intelligence (AI) algorithms.

Advances in spintronics have led to the practical use of magnetoresistive random-access memory (MRAM), a non-volatile memory technology that supports energy-efficient semiconductor integrated circuits ...

Embedded systems such as Internet of Things (IoT) devices and single-board computers possess limited memory and processing ...

3. Next-Generation 3D Memory Technology with Horizontal Cell Stacking Structure: Kioxia developed a new 3D structure to improve reliability and prevent degradation of NAND-type cell performance.

Researchers at the University of Minnesota Twin Cities have made a promising breakthrough in memory technology by using a nickel-tungsten alloy called Ni₄W. This material shows powerful magnetic ...

--GSI Technology, Inc., the inventor of the Associative Processing Unit, a paradigm shift in artificial intelligence and high-performance compute processing providing true compute-in-memory ...