Deep vertical holes and re-entrant features challenge the best metrology methods.
As the AI boom fuels massive data-center buildouts, demand for memory keeps climbing – and with it, the notoriously high power consumption of today's NAND. Samsung's ...
The 74ABT00 is a quad 2-input NAND gate. This device is fully specified for partial power down applications using Ioff. The Ioff circuitry disables the output, preventing the potentially damaging ...
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Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors
Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%.
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