Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
700% higher concurrency 50% memory savings Startup is 10 times faster. Packing 90% smaller; It also supports java8 ~ java25, native runtime.
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