Tech Xplore

Aluminum nitride transistor advances next-gen RF electronics

Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are ...
IEEE

Using High Dielectric Constant HfO₂/ZrO₂ Superlattice Dielectrics to Enhance Ge Stacked Nanosheets Gate-All-Around Transistor Performance

Abstract: This study investigated different layer thicknesses of HfO2/ZrO2 superlattice (SL HZO) as gate oxides. Metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) capacitors were ...
IEEE

Modified Three-Way Doherty Power Amplifier Design Using Simplified Transistor Model Assisted Optimization for Ultra-Wideband Applications

Abstract: This paper presents the design and realization of an ultra-wideband three-way Doherty power amplifier (DPA). A modified load modulation network (LMN) with very simple circuit structure is ...
C&EN

Integration of Quantum Dot Light-Emitting Diodes and Charge Trap Thin-Film Transistor Arrays for Memory-In-Pixel Applications

Department of Photonics and Nanoelectronics, and BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Korea ...