Researchers from University of Science and Technology of China (USTC) have achieved dynamic junction temperature ( Tj ) ...

Navitas Semiconductor has announced that Xiaomi’s next-generation 90W GaN charger will be powered by GaNSense Control ICs.

The court found that Infineon´s patent was infringed by GaN products that Innoscience is offering in Germany. The decision in ...

Kyma Technologies in the US and Novel Crystal Technology (NCT) in Japan, both experts in Ga 2 O 3 technology, have announced ...

Russell Garcia, Chief Executive Officer, Menlo Microsystems, discusses some of the company’s recent technology launches and ...

Vishay Intertechnology has introduced a new series of uni/bidirectional 1500 W surface-mount PAR transient voltage suppressors (TVS) in the SMB (DO-214AA) package. To meet the demands of automotive ...

Vishay Intertechnology has introduced a new series of uni/bidirectional 1500 W surface-mount PAR transient voltage suppressors (TVS) in the SMB (DO-214AA) package. To meet the demands of automotive ...

Magnachip Semiconductor has releases a new 80V MXT MV MOSFET featuring a TOLT (TO-Leaded Top-Side Cooling) package. The ...

The TLP579xH series meets the increasing demand for gate drivers that drive high-voltage power devices from the low-voltage control side through isolation, offering more accurate performance over a ...

The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side cooling platform and are ...

This latest triumph builds on previous successes by the Japanese company, which has shown that quartz-free HVPE can grow GaN ...